sot-89 plastic-encapsulate transistors transistor (npn) features z low v ce(sat) .v ce(sat) =0.16v(typ.)(i c /i b =2a/0.2a) z maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 40 v v ceo collector-emitter voltage 32 v v ebo emitter-base voltage 5 v i c collector current -continuous 2 a p c collector dissipation 500 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =50 a, i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 32 v emitter-base breakdown voltage v (br)ebo i e =50 a, i c =0 5 v collector cut-off current i cbo v cb =20v, i e =0 1 a emitter cut-off current i ebo v eb =4v, i c =0 1 a dc current gain h fe(1) v ce =3v, i c =500ma 82 390 collector-emitter saturation voltage v ce(sat) i c =2a, i b =0.2a 0.8 v transition frequency f t v ce =5v, i c =50ma, f=100mhz 100 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz 30 pf classification of h fe(1) rank p q r range 82-180 120-270 180-390 marking dbp dbq dbr sot-89 1. base 2. collector 3. emitter 2012- 0 willas electronic corp. 2SD1766
10 100 10 100 1000 0.1 1 10 100 1000 0 200 400 600 800 1000 0 25 50 75 100 125 150 0 200 400 600 0.1 1 10 100 1000 1 10 100 1 10 100 1000 10 100 1000 0.1 1 10 1 10 100 1000 0.0 0.3 0.6 0.9 1.2 0.1 1 10 100 1000 012345 0 100 200 300 400 500 600 700 40 5 2000 i c f t common emitter v ce =5v t a =25 collector current i c (ma) transition frequency f t (mhz) 2000 =10 i c v besat base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 p c t a ambient temperature t a ( ) collector power dissipation p c (mw) 2000 2000 t a =100 t a =25 =10 i c v cesat collector-emitter saturation voltage v cesat (mv) collector curremt i c (ma) 300 typical characteristics i c h fe t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = 3v 30 f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib c ob c ib reverse voltage v (v) capacitance c (pf) collector current i c (ma) base-emmiter voltage v be (v) v be i c t a = 2 5 t a = 1 0 0 common emitter v ce =3v static characteristic common emitter t a =25 2.0ma 1.6ma 1.4ma 1.2ma 1.0ma 0.8ma 0.6ma 1.8ma 0.4ma i b =0.2ma collector current i c (ma) collector-emitter voltage v ce (v) 2012- 0 willas electronic corp. sot-89 plastic-encapsulate transistors 2SD1766
outline drawing dimensions in inches and (millimeters) sot-89 rev.c .047(1.2) .031(0.8) .102(2.60) .091(2.30) .181(4.60) .173(4.39) .061ref (1.55)ref .023(0.58) .016(0.40) .060typ (1.50)typ .118typ (3.0)typ .197(0.52) .013(0.32) .017(0.44) .014(0.35) .063(1.60) .055(1.40) .154(3.91) .167(4.25) 2012- 0 willas electronic corp. sot-89 plastic-encapsulate transistors 2SD1766
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